Ablestik：

導電銀膠:主要經(jīng)營有ABLEBOND 84-1A、84-1LMI、 84-1LMINB(B1)、 84-1LMISR4、84-1LMIT(T1)、 826-1DS、826-2、2600AT、2600BT、2185A、2030SC、2100A、3185、8290、8340、8360、8352L、968-2、979-1、71-1、JM7000等一系列產(chǎn)品,適用于半導體(IC)封裝(如DIP/SOP/TO-92/BGA...)、LED(如普通發(fā)光二極管/LAMP/大功率管/數(shù)碼管...)等領(lǐng)域,用于各種貼片、點膠、背膠等工藝.

絕緣膠:主要經(jīng)營有ABLEBOND84-3、84-3J、84-3LV、84-3MV、789-3、789-4、2025D 、2025M、 2035SC 、8384、8387A、8387B、2039H、DX-10、DX-20-4等一系列產(chǎn)品,適用于半導體(IC)封裝、攝像頭(CMOS/CCD)工藝、LED、智能卡等領(lǐng)域,用于各種貼片、或有粘貼的等工藝.

UV膠:主要經(jīng)營有ABLELUXHGA-3E、HGA-3S、A4021T、A4035T、A4039T、A4061T、A4083T、A4086T、A4088T、A4502、CC4310、AA50T 、BF-4 、OG RFI146T等一系列UV紫外固化膠,適用于光電、光電儀表、光纖、手機攝像頭(CMOS)等領(lǐng)域;如手機攝像頭Lens固定,光纖耦合器(Coupler),激光器(Laser),跳線(Jamper),衰減器(Attenuator),探測器(Detector)等。

膠膜:主要經(jīng)營有ABLEFILM506 、508、550S、561K、570K、5020、5020K、5025E等一系列產(chǎn)品,適用于各種電子產(chǎn)品,軍工產(chǎn)品,電源等。

ABLESTIK JM7000具有高可靠性，低空洞特點，耐高溫可達370度。

常用超大規(guī)模集成電路封裝，陶瓷焊接封裝和焊接密封封裝

漢高ablestik JM7000高可靠性導電膠 耐高溫導電膠300度

ABLESTIK JM7000耐高溫300℃導電膠

LOCTITE ABLESTIK JM 7000 die attach adhesive has been
formulated for use in high throughput die attach applications. This
material has been used successfully on rigid substrates with die sizes
up to 700 mils.
LOCTITE ABLESTIK JM 7000 has been approved by DESC and
Rome Laboratory for military products.
TYPICAL PROPERTIES OF CURED MATERIAL
Physical Properties
Coefficient of Thermal Expansion, :
Below Tg, ppm/°C 33
Glass Transition Temperature (Tg) by TMA, °C 240
Bulk Thermal Conductivity, W/(m-K):
@ 90°C 1.1
@ 165°C 1.0
Tensile Modulus, DMTA :
Cured 30 minutes @ 300oC N/mm2 10,000
(psi) (1,450,377)
Extractable Ionic Content, @ 100°C:
Chloride (Cl-) <10
Sodium (Na+) <15
Potassium (K+) <15
Decomposition (in N2):
TGA analysis @ 10oC/ minute ramp from 25 to 400
oC
@ 340oC, % 0.2
@ 400oC, % 0.3
Electrical Properties
Sample cured 30 minutes @ 300oC
Volume Resistivity, ohm-cm ≤0.01
TYPICAL PERFORMANCE OF CURED MATERIAL
Die Shear Strength:
2 X 2 mm Si die, kg-f,
cured 20 minutes @ 150oC
Substrate DSS
Ag/Cu LF ≥5
Tensile Strength :
cured 30 minutes @ 300oC, MPa
After Cure After 1000 TC'C"
>17 >17
Radius of Curvature:
Si die on Alumina, meters
cured 30 minutes @ 300oC
Chip Size: ROC
15 x 15 mm > 5